IGBT GW80H65DFB, STGW80H65DFB, STGW80H65, TO-247 650V 80A. STMicroelectronics

-Maximum junction temperature: TJ = 175 °C

-High speed switching series

-Minimized tail current

-Very low saturation voltage: VCE(sat) = 1.65 V (typ.) @ IC = 80 A

-Tight parameters distribution

-Safe paralleling

-Low thermal resistance

-Very fast soft recovery antiparallel diode

-Lead free package Applications

-Photovoltaic inverters

-High frequency converter

B1014-1590